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SGW50N60HS
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High Speed IGBT in NPT-technology
C
* 30% lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for operation above 30 kHz * NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution * * * * High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 50A Eoff25 Tj Marking Package PG-TO-247-3-21
G E
PG-TO-247-3-21
Type SGW50N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C
0.88mJ 150C G50N60HS Symbol VCE IC
Value 600 100 50
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Avalanche energy single pulse IC = 50A, VCC=50V, RGE=25 start TJ=25C Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s
2)
ICpul s EAS
150 150 280 mJ
VGE tSC Ptot Tj , Tstg Tj(tl) -
20 30 10 416 -55...+150 175 260
V s W C
VGE = 15V, VCC 600V, Tj 150C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 June 06
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SGW50N60HS
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Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient RthJA 40 RthJC 0.3 K/W Symbol Conditions Max. Value Unit
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 50 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 1m A, V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
Symbol
Conditions
Value min. 600 3 Typ. 2.8 3.15 4 31 max. 3.15 5
Unit
V
A 40 3000 100 nA S
IGES gfs
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 50 A
Ciss Coss Crss QGate LE IC(SC)
V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =5 0 A V G E = 15 V
-
2572 245 158 179 13 471
-
pF
nC nH A
V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 1 5 0 C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.1 June 06
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SGW50N60HS
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Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 5 0 A, V G E = 0/ 15 V , R G = 1 .8 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode 2) reverse recovery . T j =1 5 0 C V C C = 40 0 V, I C = 5 0 A, V G E = 0/ 15 V , R G = 6 .8 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode 2) reverse recovery . 50 28 225 14 1 0.90 1.9 48 31 350 20 1.5 1.1 2.6 mJ ns mJ ns Symbol Conditions Value min. typ. max. Unit td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 5 0 A, V G E = 0/ 15 V , R G = 6. 8 1) L = 55 n H, 1) C = 40 pF Energy losses include "tail" and diode 2) reverse recovery . 47 32 310 16 1.08 0.88 1.96 mJ ns Symbol Conditions Value min. typ. max. Unit
1 2
Leakage inductance L a n d Stray capacity C due to test circuit in Figure E. Diode used in this test is IDP45E60 3 Rev. 2.1 June 06
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SGW50N60HS
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140A 120A 100A 80A 60A
T C=80C
100A
tP=1s 2s
IC, COLLECTOR CURRENT
T C=110C
IC, COLLECTOR CURRENT
10s 10A 50s
Ic
40A 20A 0A
1ms 10ms 1A DC
Ic
10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 6.8)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C; VGE=15V)
100A
350W
90A
IC, COLLECTOR CURRENT
25C 50C 75C 100C 125C
Ptot, POWER DISSIPATION
80A 70A 60A 50A 40A 30A 20A 10A 0A 25C 75C 125C
250W
150W
50W
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
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120A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
VGE=19V 15V 13V 11V 9V 7V
120A
90A
90A
VGE=19V 15V 13V 11V 9V 7V
60A
60A
30A
30A
0A
0V
1V
2V
3V
4V
0A
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
IC=100A 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C IC=25A IC=50A
120A
IC, COLLECTOR CURRENT
90A
60A
30A
T J=150C 25C
0A
0V
2V
4V
6V
8V
0C
50C
100C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
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td(off)
t, SWITCHING TIMES
100ns tf
t, SWITCHING TIMES
td(off)
100 ns td(on)
td(on)
tf
tr 10ns 0A 20A 40A 60A 80A
tr
10 ns
0
3
6
9
12
15
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=6.8, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=50A, Dynamic test circuit in Figure E)
VGE(th), GATE-EMITTER TRSHOLD VOLTAGE
5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C min. 150C typ. max.
td(off)
t, SWITCHING TIMES
100ns td(on) tr tf
10ns 25C
50C
75C
100C
125C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=50A, RG=6.8, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1mA)
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*) E on and Ets include losses due to diode recovery 5mJ
3.5 mJ
*) Eon and Ets include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
E ts * 4mJ Eon* 3mJ
3.0 mJ 2.5 mJ 2.0 mJ 1.5 mJ 1.0 mJ 0.5 mJ Eoff Eon* Ets*
2mJ
E off
1mJ
0mJ
0A
20A
40A
60A
80A
0.0 mJ
0
3
6
9
12
15
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=6.8, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=50A, Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
*) Eon and Ets include losses due to diode recovery
Ets*
D=0.5 10 K/W
-1
E, SWITCHING ENERGY LOSSES
0.2 0.1 0.05
R,(K/W) 0.116 0.0729 0.0543 0.0386 0.0173
R1
2mJ Eon*
10 K/W
-2
0.02 0.01 single pulse
1mJ
Eoff
, (s) 0.0895 2.45E-02 1.95E-03 2.07E-04 1.05E-05
R2
C 1 = 1 / R 1 C 2 = 2 /R 2
0mJ 0C 50C 100C
10 K/W 1s 10s 100s 1ms 10ms 100ms
-3
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=50A, RG=6.8, Dynamic test circuit in Figure E)
tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T)
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Ciss
15V
VGE, GATE-EMITTER VOLTAGE
120V 9V
480V
c, CAPACITANCE
12V
1nF
Coss
6V
3V
Crss 100pF
0V 0nC
50nC
100nC 150nC 200nC 250nC
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
10V 11V 12V 13V 14V
700A 600A 500A 400A 300A 200A 100A 0A
tSC, SHORT CIRCUIT WITHSTAND TIME
15s
10s
5s
0s
10V
12V
14V
16V
18V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C)
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PG-TO247-3-21
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SGW50N60HS
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1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
TC
Figure D. Thermal equivalent circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =55nH an d Stray capacity C =40pF.
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Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 12/7/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
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